High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
نویسندگان
چکیده
منابع مشابه
High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the el...
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ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2014
ISSN: 0897-4756,1520-5002
DOI: 10.1021/cm4035837